Last update : 10.11.2025
Guillemard, C., Zhang, W., Malinowski, G., de Melo, C., Gorchon, J., Petit‐Watelot, S., Ghanbaja, J., Mangin, S., Le Fèvre, P., Bertran, F., Andrieu, S. "Engineering Co2MnAlx Si1−x Heusler Compounds as a Model System to Correlate Spin Polarization, Intrinsic Gilbert Damping, and Ultrafast Demagnetization" Advanced Materials., 32(26): art.n° 1908357. (2020).
Ohtsubo, Y., Tokumasu, N., Watanabe, H., Nakamura, T., Le Fèvre, P., Bertran, F., Imamura, M., Yamamoto, I., Azuma, J., Takahashi, K., Kimura, S.I. "One-dimensionality of the spin-polarized surface conduction and valence bands of quasi-one-dimensional Bi chains on GaSb(110)-(2×1)" Physical Review B., 101(23): art.n° 235306. (2020).
Barbier, C., Zhou, T., Renaud, G., Geaymond, O., Le Fèvre, P., Glas, F., Madouri, A., Cavanna, A., Travers, L., Morassi, M., Gogneau, N., Tchernycheva, M., Harmand, J.C., Largeau, L. "In situ X-ray diffraction study of GaN nucleation on transferred graphene" Crystal Growth & Design., 20(6): 4013–4019. (2020).
Dupont, C., Jupille, J., Bourgeois, S., Le Fevre, P., Verdini, A., Floreano, L., Domenichini, B. "Substitution of Titanium for Magnesium Ions at the Surface of Mg-Doped Rutile" Journal of Physical Chemistry C., 124(21): 11490–11498. (2020).
Celis Retana, A.E., Nair, M.N., Sicot, M., Nicolas, F., Kubsky, S., Taleb-Ibrahimi, A., Malterre, D., Tejeda, A. "Growth, morphology and electronic properties of epitaxial graphene on vicinal Ir(332) surface" Nanotechnology., 31(28): art.n° 285601. (2020).
Husanu, M.A., Vistoli, L., Verdi, C., Sander, A., Garcia, V., Rault, J., Bisti, F., Lev, L.L., Schmitt, T., Giustino, F., Mishchenko, A.S., Bibes, M., Strocov, V.N. "Electron-polaron dichotomy of charge carriers in perovskite oxides" Communications Physics., 3: art.n° 62. (2020).
Watson, M.D., Marković,I., Abarca Morales,E., Le Fèvre, P., Merz, M., Haghighirad, A.A., King, P.D.C. "Band hybridization at the semimetal-semiconductor transition of Ta2NiSe5 enabled by mirror-symmetry breaking" Physical Review Research., 2(1): art.n° 013236. (2020).
Dai, J., Frantzeskakis, E., Fortuna, F., Lömker, P., Yukawa, R., Thees, M., Sengupta, S., Le Fèvre, P., Bertran, F., Rault, J.E., Horiba, K., Müller, M., Kumigashira, H., Santander-Syro, A. F. "Tunable two-dimensional electron system at the (110) surface of SnO2" Physical Review B., 101(8): art.n° 085121. (2020).
Marković,I., Hooley,C.A., Clark,O.J., Mazzola,F., Watson, M.D., Riley,J.M., Volckaert, K., Underwood,K., Dyer,M.S., Murgatroyd,P.A.E., Murphy,K.J., Le Fèvre, P., Bertran, F., Fujii, J., Vobornik, I., Wu, S., Okuda, T., Alaria, J., King, P.D.C. "Weyl-like points from band inversions of spin-polarised surface states in NbGeSb" Nature Communications., 10: art.n° 5485. (2019).
Nakamura, T., Ohtsubo, Y., Tokumasu, N., Le Fèvre, P., Bertran, F., Ideta, S.I., Tanaka, K., Kuroda, K., Yaji, K., Harasawa, A., Shin, S., Komori, F., Kimura, S.I. "Giant Rashba system on a semiconductor substrate with tunable Fermi level: Bi/GaSb(110)-(2 × 1)" Physical Review Materials., 3(12): art.n° 126001. (2019).