PUBLICATIONS

Last update : 09/03/2026
  • Nakayama, K., Souma, S., Trang, C.X., Takane, D., Chen, C., Avila, J., Takahashi, T., Sasaki, S., Segawa, K., Asensio, M.C., Ando, Y., Sato, S. "Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES" Nano Letters., 19(6): 3737-3742. (2019).
  • Joucken, F., Quezada-López, E.A., Avila, J., Chen, C., Davenport, J.L., Chen, H., Watanabe, K., Taniguchi, T., Asensio, M.C., Velasco, J. Jr. "Nanospot angle-resolved photoemission study of Bernal-stacked bilayer graphene on hexagonal boron nitride: Band structure and local variation of lattice alignment" Physical Review B., 99(16): art.n° 161406. (2019).
  • Joucken, F., Avila, J., Ge, Z., Quezada-Lopez, E.A., Yi, H., Le Goff, R., Baudin, E., Davenport, J.L., Watanabe, K., Taniguchi, T., Asensio, M.C., Velasco Jr., J. "Visualizing the effect of an electrostatic gate with angle-resolved photoemission spectroscopy" Nano Letters., 19(4): 2682−2687. (2019).
  • Dudin, P., Herriott, D., Davies, T., Krzton-Maziopa, A., Pomjakushina, E., Conder, K., Cachao, C., Yates, J.R., Speller, S.C. "Imaging the local electronic and magnetic properties of intrinsically phase separated Rb x Fe2–y Se2 superconductor using scanning microscopy techniques" Superconductor Science and Technology., 32(4): art.n° 044005. (2019).
  • Bourquard, F., Bleu, Y., Loir, A.S., Caja-Munoz, B., Avila, J., Asensio, M.C., Raimondi, G., Shokouhi, M., Rassas, I., Farre, C., Chaix, C., Barnier, V., Jaffrezic-Renault, N., Garrelie, F., Donnet, C. "Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing" Materials., 12(4): art.n° 666. (2019).
  • Valbuena, M.A., Chudzinski, P., Pons, S., Conejeros, S., Alemany, P., Canadell, E., Berger, H., Frantzeskakis, E., Avila, J., Asensio, M.C., Giamarchi, T., Grioni, M. "Polarization dependence of angle-resolved photoemission with submicron spatial resolution reveals emerging one-dimensionality of electrons in NbSe3" Physical Review B., 99(7): art.n° 075118. (2019).
  • Randle, M., Lipatov, A., Kumar, A., Kwan, C.P., Nathawat, J., Barut, B., Yin, S., He, K., Arabchigavkani, N., Dixit, R., Komesu, T., Avila, J., Asensio, M.C., Dowben, P.A., Sinitskii, A., Singisetti, U., Bird, J.P. "Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors" ACS Nano., 13(1): 803–811. (2019).
  • Cui, J., Chen, C., He, W., Avila, J., Zhao, L.D., Asensio, M.C., He, J., Chen, Y. "Large enhancement of electrical transport properties of SnS in the out-of-plane direction by n-type doping: a combined ARPES and DFT study" Journal of Materials Chemistry A., 6(47): 24588-24594. (2018).
  • Chen, C., Avila, J., Arezki, H., Nguyen, V.L., Shen, J., Mucha-Kruczyński, M., Yao, F., Boutchich, M., Chen, Y., Lee, Y.H., Asensio, M.C. "Retraction Note: Large local lattice expansion in graphene adlayers grown on copper" Nature Materials., 17(11): 1048. (2018).
  • Ben Aziza, Z., Zólyomi, V., Henck, H., Pierucci, D., Silly, M.G., Avila, J., Magorrian, S.J., Chaste, J., Chen, C., Yoon, M., Xiao, K., Sirotti, F., Asensio, M.C., Lhuillier, E., Eddrief, M., Fal'ko, V.A., Ouerghi, A. "Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe" Physical Review B., 98(11): art.n° 115405. (2018).