PUBLICATIONS

Last update : 09/03/2026
  • Ernandes, C., Khalil, L., Almabrouk, H., Pierucci, D., Zheng, B., Avila, J., Dudin, P., Chaste, J., Oehler, F., Pala, M., Bisti, F., Brulé, T., Lhuillier, E., Pan, A., Ouerghi, A. "Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys" npj 2D Materials and Applications., 5: art.n° 7. (2021).
  • Chen, Y., Jiang, J., Yang, H., Dudin, P., Barinov, A., Liu, Z., Wen, H., Yang, L., Chen, Y. "Visualization of the electronic phase separation in superconducting KxFe2−ySe2" Nano Research., 14(3): 823–828. (2021).
  • Zribi, J., Khalil, L., Avila, J., Chaste, J., Henck, H., Oehler, F., Gil, B., Liu, S., Edgar, J.H., Giorgetti, C., Dappe, Y.J., Lhuillier, E., Cassabois, G., Ouerghi, A., Pierucci, D. "Structural and electronic transitions in few layers of isotopically pure hexagonal boron nitride" Physical Review B., 102(11): art.n° 115141. (2020).
  • Gilbert, S.J., Yi, H., Chen, J.S., Yost, A.J., Dhingra, A., Abourahma, J., Lipatov, A., Avila, J., Komesu, T., Sinitskii, A., Asensio, M.C., Dowben, P.A. "Effect of Band Symmetry on Photocurrent Production in Quasi-One-Dimensional Transition-Metal Trichalcogenides" ACS Applied Materials & Interfaces., 12(36): 40525–40531. (2020).
  • Nguyen, V.L., Duong, D.L., Lee, S.H., Avila, J., Han, G., Kim, Y.M., Asensio, M.C., Jeong, S.Y., Lee, Y.H. "Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation" Nature Nanotechnology., 15(10): 861–867. (2020).
  • Hlevyack, J.A., Najafzadeh, S., Lin, M.K., Hashimoto, T., Nagashima, T., Tsuzuki, A., Fukushima, A., Bareille, C., Bai, Y., Chen, P., Liu, R.Y., Li, Y., Flötotto, D., Avila, J., Eckstein, J.N., Shin, S., Okazaki, K., Chiang, T.C. "Massive Suppression of Proximity Pairing in Topological (Bi1−xSbx)2Te3 Films on Niobium" Physical Review Letters., 124(23): art.n° 236402. (2020).
  • Yi, H., Gilbert, S.J., Lipatov, A., Sinitskii, A., Avila, J., Abourahma, J., Komesu, T., Asensio, M.C., Dowben, P.A. "The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS3 compared to TiS3" Journal of Physics Condensed Matter., 32(29): art.n° 29LT01. (2020).
  • Hell, M., Ehlen, N., Marini, G., Falke, Y., Senkovskiy, B.V., Herbig, C., Teichert, C., Jolie, W., Michely, T., Avila, J., Di Santo, G., de la Torre, D., Petaccia, L., Profeta, G., Grüneis, A. "Massive and massless charge carriers in an epitaxially strained alkali metal quantum well on graphene" Nature Communications., 11: art.n° 1340. (2020).
  • Gao, Z., Wang, S., Berry, J., Zhang, Q., Gebhardt, J., Parkin, W.M., Avila, J., Yi, H., Chen, C., Hurtado-Parra, S., Drndić,M., Rappe,A.M., Srolovitz,D.J., Kikkawa,J.M., Luo,Z., Asensio,M.C., Wang, F., Johnson, A.T.C. "Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene" Nature Communications., 11: art.n° 546. (2020).
  • Lin, M.K., Villaos, R.A.B., Hlevyack, J.A., Chen, P., Liu, R.Y., Hsu, C.H., Avila, J., Mo, S.K., Chuang, F.C., Chiang, T.C. "Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe2 Films" Physical Review Letters., 124(3): art.n° 036402. (2020).