PUBLICATIONS

Last update : 05/05/2026
  • Dabrowski, J., Lippert, G., Avila, J., Baringhaus, J., Colambo, I., Dedkov, Y.S., Herziger,F., Lupina, G., Maultzsch, J., Schaffus, T., Schroeder, T., Kot, M., Tegenkamp, C., Vignaud, D., Asensio, M.C. "Understanding the growth mechanism of graphene on Ge/Si(001) surfaces" Scientific Reports., 6: art.n° 31639 . (2016).
  • Sanchez-Royo, J.F., Pellicer-Porres, J., Segura, A., Gilliland, S.J., Avila, J., Asensio, M.C., Safonova, O., Izquierdo, M., Chevy, A. "Buildup and structure of the InSe/Pt interface studied by angle-resolved photoemission and x-ray absorption spectroscopy" Physical Review B., 73(15): art.n° 155308. (2006).
  • Pancotti, A., Wang, J., Chen, P., Tortech, L., Teodorescu, C.M., Frantzeskakis, E., Barrett, N. "X-ray photoelectron diffraction study of relaxation and rumpling of ferroelectric domains in BaTiO3(001)" Physical Review B., 87(18): art.n° 184116. (2013).
  • Wang, E., Chen, G., Wan, G., Lu, X., Chen, C., Avila, J., Fedorov, A.V., Zhang, G., Asensio, M.C., Zhang, Y., Zhou, S. "Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES" Journal of Physics Condensed Matter., 28(44): art.n° 444002. (2016).