PUBLICATIONS

Last update : 24/06/2026
  • Stephan, R., Hanf, M.C., Derivaz, M., Dentel, D., Asensio, M.C., Avila, J., Mehdaoui, A., Sonnet, P., Pirri, C. "Germanene on Al(111): Interface Electronic States and Charge Transfer" Journal of Physical Chemistry C., 120(3): 1580–1585. (2016).
  • Valbuena, M.A., Avila, J., Vyalikh, D.V., Guyot, H., Laubschat, C., Molodtsov, S.L., Asensio, M.C. "Electronic band structure and charge density wave transition in quasi-2D KMo6O17 purple bronze" Journal of Physics Conferences Series., 100: art.n° 072021. (2008).
  • Deokar, G., Avila, J., Razado-Colambo, I., Codron, J.L., Boyaval, C. Galopin, E., Asensio, M.C., Vignaud, D. "Towards high quality CVD graphene growth and transfer" Carbon., 89: 82-92. (2015).
  • Vogt, P., De Padova, P., Quaresima, C., Avila, J., Frantzeskakis, E., Asensio, M.C., Resta, A., Ealet, B., Le Lay, G. "Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon" Physical Review Letters., 108(15): art.n° 155501. (2012).
  • Dabrowski, J., Lippert, G., Avila, J., Baringhaus, J., Colambo, I., Dedkov, Y.S., Herziger,F., Lupina, G., Maultzsch, J., Schaffus, T., Schroeder, T., Kot, M., Tegenkamp, C., Vignaud, D., Asensio, M.C. "Understanding the growth mechanism of graphene on Ge/Si(001) surfaces" Scientific Reports., 6: art.n° 31639 . (2016).
  • Sanchez-Royo, J.F., Pellicer-Porres, J., Segura, A., Gilliland, S.J., Avila, J., Asensio, M.C., Safonova, O., Izquierdo, M., Chevy, A. "Buildup and structure of the InSe/Pt interface studied by angle-resolved photoemission and x-ray absorption spectroscopy" Physical Review B., 73(15): art.n° 155308. (2006).
  • Pancotti, A., Wang, J., Chen, P., Tortech, L., Teodorescu, C.M., Frantzeskakis, E., Barrett, N. "X-ray photoelectron diffraction study of relaxation and rumpling of ferroelectric domains in BaTiO3(001)" Physical Review B., 87(18): art.n° 184116. (2013).
  • Wang, E., Chen, G., Wan, G., Lu, X., Chen, C., Avila, J., Fedorov, A.V., Zhang, G., Asensio, M.C., Zhang, Y., Zhou, S. "Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES" Journal of Physics Condensed Matter., 28(44): art.n° 444002. (2016).
  • Moreau, E., Godey, S., Ferrer, F.J., Vignaud, D., Wallart, X., Avila, J., Asensio, M.C., Bournel, F., Gallet, J.J. "Graphene growth by molecular beam epitaxy on the carbon-face of SiC" Applied Physics Letters., 97(24): art.n° 241907. (2010).
  • Johannsen, J.C., Autès, G., Crepaldi, A., Moser, S., Casarin, B., Cilento, F., Zacchigna, M., Berger, H., Magrez, A., Bugnon, P., Avila, J., Asensio, M.C., Parmigiani, F., Yazyev, O. V., Grioni, M. "Engineering the topological surface states in the (Sb2)m−Sb2Te3(m=0–3) superlattice series" Physical Review B., 91(20): art.n° 201101. (2015).