PUBLICATIONS
- Louat, A., Bert, F., Serrier-Garcia, L., Bertran, F., Le Fèvre, P., Rault, J., Brouet, V. "Formation of an incoherent metallic state in Rh-doped Sr2IrO4" Physical Review B., 97(16): art.n° 161109. (2018).
- Yang, H.F., Chen, C., Wang, H., Liu, Z.K., Zhang, T., Peng, H., Schröter, N.B.M., Ekahana, S.A., Jiang, J., Yang, L.X., Kandyba, V., Barinov, A., Chen, C.Y., Avila, J., Asensio, M.C., Peng, H.L., Liu, Z.F., Chen, Y.L. "Single crystalline electronic structure and growth mechanism of aligned square graphene sheets" APL Materials., 6(3): art.n° 036107. (2018).
- Gunasekera, S.M., Wolverson, D., Hart, L.S., Mucha-Kruczynski, M. "Electronic Band Structure of Rhenium Dichalcogenides" Journal of Electronic Materials., 47(8): 4314–4320. (2018).
- Agnoli, S., Ambrosetti, A., Menteş,T.O., Sala, A., Locatelli,A., Silvestrelli,P.L., Cattelan,M., Eichfeld,S.M., Deng,D.D., Robinson, J.A., Avila,J., Chen,C., Asensio, M.C. "Unravelling the Structural and Electronic Properties at the WSe2-Graphene Interface for a Rational Design of Van der Waals Heterostructures" ACS Applied Nano Materials., 1(3): 1131–1140. (2018).
- Head, A.R., Johansson, N., Niu, Y., Snezhkova, O., Chaudhary, S., Schnadt, J., Bluhm, H., Chen, C., Avila, J., Asensio, M.C. "In situ characterization of the deposition of anatase TiO2 on rutile TiO2(110)" Journal of vacuum Science & Technology A., 36(2): art.n° 02D405. (2018).
- Maddi, C., Bourquard, F., Barnier, V., Avila, J., Asensio, M.C., Tite, T., Donnet, C., Garrelie, F. "Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source" Scientific Reports., 8: art.n° 3247. (2018).
- Di Bernardo, I., Avvisati, G., Chen, C., Avila, J., Asensio, M.C., Kailong, H., Ito, Y., Hines, P., Lipton-Duffin, J., Rintoul, L., Motta, N., Mariani, C., Betti, M.G. "Topology and doping effects in three-dimensional nanoporous graphene" Carbon., 131: 258-265. (2018).
- Yi, H., Komesu, T., Gilbert, S., Hao, G., Yost, A.J., Lipatov, A., Sinitskii, A., Avila, J., Chen, C., Asensio, M.C., Dowben, P.A. "The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)" Applied Physics Letters., 112(5): art.n° 052102. (2018).
- Tayari, V., Senkovskiy, B.V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C.Y., Avila, J., Asensio, M.C., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grüneis, A., Szkopek, T. "Quasi-two-dimensional thermoelectricity in SnSe" Physical Review B., 97(4): art.n° 045424. (2018).
- Berger, A.N., Andrade, E., Kerelsky, A., Edelberg, D., Li, J., Wang, Z., Zhang, L., Kim, J., Zaki, N., Avila, J., Chen, C., Asensio, M.C., Cheong, S.W., Bernevig, B.A., Pasupathy, A.N. "Temperature-driven topological transition in 1T'-MoTe2" npj Quantum Materials., 3: art.n° 2. (2018).