Research carried out on the CASSIOPEE beamline by French and American scientists (Atlanta, Berkeley, California-Davis, Nancy, Gif-sur-Yvette) involves samples of graphene obtained by epitaxy. Using angle-resolved photoemission spectroscopy (ARPES), these teams revealed for the first time that the electronic properties of multilayer graphene produced by this technique are comparable to those of a single layer of this material, a necessary condition for the development of graphene-based electronics (Ref 1).
[Read the January 2010 article]
The CNRS members (Marcoussis, Paris and Valbonne) of the TEMPO and HERMES beamline teams chose an approach that involves combining microscopy techniques (LEEM, STEM, STM) and angle-resolved photoemission spectroscopy on samples of graphene obtained by a different technique from the one already mentioned, thus demonstrating the coherence between the structural and electronic properties of the material (Refs 2 and 3).
[Read the October 2010 article]
(1) First direct observation of a nearly ideal graphene band structure
M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, P. Soukiassian, A. Tejeda, A.
Taleb-Ibrahimi, P. Le Fèvre, F. Bertran, S. Vizzini, H. Enriquez, S. Chiang, C.
Berger, W.A. de Heer, A. Lanzara, E.H. Conrad
Phys Rev Lett, 103, 226803 (2009)
(2) Structural coherency of epitaxial graphene on 3C-SiC 111 epilayers on Si 111
A. Ouerghi, R. Belkhou, M. Marangolo, M. Silly, S. El Moussaoui, M. Eddrief, L.
Largeau, M. Portail, and F. Sirotti
APPLIED PHYSICS LETTERS 97, 1 (2010)
(3) Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties
A. Ouerghi, M. Marangolo, R. Belkhou, S. El Moussaoui, M. G. Silly, M. Eddrief, L.
Largeau, M. Portail, B. Fain, and F. Sirotti
PHYSICAL REVIEW B 82, 125445 (2010)
