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Spintronique : les propriétés prometteuses de conversion courant de spin/courant de charge d’un isolant topologique
Publié le 26/05/2023
... Comme présenté précédemment, les isolants topologiques sont des matériaux isolants électriques, mais dont la surface (sur quelques plans atomiques) est conductrice. Sur la ligne CASSIOPEE, des études portant sur des alliages Bi1-xSbx ont ...
Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 − xSbx Topological Insulator
Publié le 27/04/2023
... Rongione, E., Baringthon, L., She, D., Patriarche, G., Lebrun, R., Lemaître, A., Morassi, M., Reyren, N., Mičica, M., Mangeney, J., Tignon, J., Bertran, F., Dhillon, S., Le Févre, P., Jaffrès, H., George, J.M. "Spin-Momentum Locking and Ultrafast Spin ...
Evolution of the spectral lineshape at the magnetic transition in Sr2IrO4 and Sr3Ir2O7
Publié le 07/04/2023
... Foulquier, P., Civelli, M., Rozenberg, M., Camjayi, A., Bobadilla, J., Colson, D., Forget, A., Thuéry, P., Bertran, F., Le Fèvre, P., Brouet, V. "Evolution of the spectral lineshape at the magnetic transition in Sr2IrO4 and Sr3Ir2O7". European Physical ...
Revealing the Epitaxial Interface between Al13Fe4 and Al5Fe2 Enabling Atomic Al Interdiffusion
Publié le 07/04/2023
... Chatelier, C., Anand, K., Gille, P., De Weerd, M.C., Ledieu, J., Fournée, V., Resta, A., Vlad, A., Garreau, Y., Coati, A., Gaudry, E. "Revealing the Epitaxial Interface between Al13Fe4 and Al5Fe2 Enabling Atomic Al Interdiffusion" ACS Applied Materials & ...
In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers
Publié le 17/02/2023
... Krause, B., Abadias, G., Babonneau, D., Michel, A., Resta, A., Coati, A., Garreau, Y., Vlad, A., Plech, A., Wochner, P., Baumbach, T. "In Situ Study of the Interface-Mediated Solid-State Reactions during Growth and Postgrowth Annealing of Pd/a-Ge Bilayers ...
Visualizing Higher-Fold Topology in Chiral Crystals
Publié le 10/02/2023
... Cochran, T.A., Belopolski, I., Manna, K., Yahyavi, M., Liu, Y., Sanchez, D.S., Cheng, Z.J., Yang, X.P., Multer, D., Yin, J.X., Borrmann, H., Chikina, A., Krieger, J.A., Sánchez-Barriga, J., Le Fèvre, P., Bertran, F., Strocov, V.N., Denlinger, J.D., Chang, ...
Early-stage growth of GeTe on Si(111)-Sb
Publié le 24/01/2023
... Croes, B., Cheynis, F., Fagot-Revurat, Y., Müller, P., Curiotto, S., Leroy, F. "Early-stage growth of GeTe on Si(111)-Sb" Physical Review Materials., 7(1): art.n° 014409. (2023). ...
Giant electron-phonon interaction for a prototypical semiconductor interface: Sn/Ge(111)-(3 × 3)
Publié le 13/01/2023
... Nair, M.N., Palacio, I., Mascaraque, A., Michel, E.G., Taleb-Ibrahimi, A., Tejeda, A., González, C., Martín-Rodero, A., Ortega, J., Flores, F. "Giant electron-phonon interaction for a prototypical semiconductor interface: Sn/Ge(111)-(3 × 3)" Physical ...
An epitaxial graphene platform for zero-energy edge state nanoelectronics
Publié le 20/12/2022
... Prudkovskiy, V.S., Hu, Y., Zhang, K., Hu, Y., Ji, P., Nunn, G., Zhao, J., Shi, C., Tejeda, A., Wander, D., De Cecco, A., Winkelmann, C.B., Jiang, Y., Zhao, T., Wakabayashi, K., Jiang, Z., Ma, L., Berger, C., de Heer, W.A. "An epitaxial graphene platform ...
2D honeycomb transformation into dodecagonal quasicrystals driven by electrostatic forces
Publié le 12/12/2022
... Schenk, S., Krahn, O., Cockayne, E., Meyerheim, H.L., de Boissieu, M., Förster, S., Widdra, W. "2D honeycomb transformation into dodecagonal quasicrystals driven by electrostatic forces" Nature Communications., 13: art.n° 7542. (2022). ...