RECHERCHER
Résultats de la recherche ""
In situ characterization of the deposition of anatase TiO2 on rutile TiO2(110)
Publié le 01/03/2018
... Head, A.R., Johansson, N., Niu, Y., Snezhkova, O., Chaudhary, S., Schnadt, J., Bluhm, H., Chen, C., Avila, J., Asensio, M.C. "In situ characterization of the deposition of anatase TiO2 on rutile TiO2(110)" Journal of vacuum Science & Technology A., 36(2): ...
Unravelling the Structural and Electronic Properties at the WSe2-Graphene Interface for a Rational Design of Van der Waals Heterostructures
Publié le 01/03/2018
... Agnoli, S., Ambrosetti, A., Menteş,T.O., Sala, A., Locatelli,A., Silvestrelli,P.L., Cattelan,M., Eichfeld,S.M., Deng,D.D., Robinson, J.A., Avila,J., Chen,C., Asensio, M.C. "Unravelling the Structural and Electronic Properties at the WSe2-Graphene ...
Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source
Publié le 21/02/2018
... Maddi, C., Bourquard, F., Barnier, V., Avila, J., Asensio, M.C., Tite, T., Donnet, C., Garrelie, F. "Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source" Scientific Reports., 8: art.n° 3247. (2018). ...
Topology and doping effects in three-dimensional nanoporous graphene
Publié le 06/02/2018
... Di Bernardo, I., Avvisati, G., Chen, C., Avila, J., Asensio, M.C., Kailong, H., Ito, Y., Hines, P., Lipton-Duffin, J., Rintoul, L., Motta, N., Mariani, C., Betti, M.G. "Topology and doping effects in three-dimensional nanoporous graphene" Carbon., 131: ...
The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)
Publié le 02/02/2018
... Yi, H., Komesu, T., Gilbert, S., Hao, G., Yost, A.J., Lipatov, A., Sinitskii, A., Avila, J., Chen, C., Asensio, M.C., Dowben, P.A. "The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)" Applied Physics Letters., 112(5): art.n° ...
Lumière sur les matériaux anciens
Publié le 29/01/2018
... Un numéro de la brochure Eclairer portant sur l’étude des matériaux anciens par les techniques synchrotron, coordonné par SOLEIL et IPANEMA, vient de paraitre.
Un aperçu des études menées sur les synchrotrons par les spécialistes des ...
Quasi-two-dimensional thermoelectricity in SnSe
Publié le 26/01/2018
... Tayari, V., Senkovskiy, B.V., Rybkovskiy, D., Ehlen, N., Fedorov, A., Chen, C.Y., Avila, J., Asensio, M.C., Perucchi, A., di Pietro, P., Yashina, L., Fakih, I., Hemsworth, N., Petrescu, M., Gervais, G., Grüneis, A., Szkopek, T. "Quasi-two-dimensional ...
Temperature-driven topological transition in 1T'-MoTe2
Publié le 18/01/2018
... Berger, A.N., Andrade, E., Kerelsky, A., Edelberg, D., Li, J., Wang, Z., Zhang, L., Kim, J., Zaki, N., Avila, J., Chen, C., Asensio, M.C., Cheong, S.W., Bernevig, B.A., Pasupathy, A.N. "Temperature-driven topological transition in 1T'-MoTe2" npj Quantum ...
Emergence of interfacial polarons from electron-phonon coupling in graphene/h-BN van der Waals heterostructures
Publié le 09/01/2018
... Chen, C., Avila, J., Wang, S., Wang, Y., Mucha-Kruczynski, M., Shen, C., Yang, R., Nosarzewski, B., Devereaux, T.P., Zhang, G., Asensio, M.C. "Emergence of interfacial polarons from electron-phonon coupling in graphene/h-BN van der Waals heterostructures" ...
Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation
Publié le 04/01/2018
... Chang, Y.W., Cheng, Y., Helfen, L., Xu, F., Tian, T., Scheel, M., Di Michiel, M., Chen, C., Tu, K.N., Baumbach, T. "Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation" Scientific Reports., 7: art.n° 17950. ...