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Résultats de la recherche ""
Electronic properties of zero-layer graphene on 6H-SiC(0001) substrate decoupled by silicon intercalation
Publié le 10/11/2016
... Silly, M.G., Li, G., Dappe, Y.J. "Electronic properties of zero-layer graphene on 6H-SiC(0001) substrate decoupled by silicon intercalation" Surface and Interface Analysis., 46(12-13): 1273–1277. (2014). ...
Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation
Publié le 10/11/2016
... Silly, M.G., D'Angelo, M., Besson, A., Dappe, Y.J., Kubsky, S., Li, G., Nicolas, F., Pierucci, D., Thomasset, M. "Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation" Carbon., 76 ...
In-Depth Atomic Structure of the Pentacene/Cu(110) Interface in the Monolayer Coverage Regime: Theory and X-ray Diffraction Results
Publié le 10/11/2016
... Sauvage-Simkin, M., Coati, A., Garreau, Y., Vlad, A., Müller, K., Bendounan, A., Kara, A. "In-Depth Atomic Structure of the Pentacene/Cu(110) Interface in the Monolayer Coverage Regime: Theory and X-ray Diffraction Results" Journal of Physical Chemistry C ...
Charge spill-out and work function of few-layer graphene on SiC(0001)
Publié le 10/11/2016
... Renault, O., Pascon, A.M., Rotella, H., Kaja, K., Mathieu, C., Rault, J.E., Blaise, P., Poiroux, B., Barrett, N., Fonseca, L.R.C. "Charge spill-out and work function of few-layer graphene on SiC(0001)" Journal of Physics D : Applied Physics., 47(29): art ...
Benzaldehyde on Water-Saturated Si(001): Reaction with Isolated Silicon Dangling Bonds versus Concerted Hydrosilylation
Publié le 10/11/2016
... Pierucci, D., Naitabdi, A., Bournel, F., Gallet, J.J., Tissot, H., Carniato, S., Rochet, F., Köhler, U., Laumann, D., Kubsky, S., Silly, M.G., Sirotti, F. "Benzaldehyde on Water-Saturated Si(001): Reaction with Isolated Silicon Dangling Bonds versus ...
Molecular Single Photon Double K-shell Ionization
Publié le 10/11/2016
... Penent, F., Nakano, M., Tashiro, M., Grozdanov, T.P., Žitnik, M., Carniato, S., Selles, P., Andric, L., Lablanquie, P., Palaudoux, J., Shigemasa, E., Iwayama, H., Hikosaka, Y., Soejima, K., Suzuki, I.H., Kouchi, N., Ito, K. "Molecular Single Photon Double ...
Cold neutron diffraction contrast tomography of polycrystalline material
Publié le 10/11/2016
... Peetermans, S., King, A., Ludwig, W., Reischig, P., Lehmann, E.H. "Cold neutron diffraction contrast tomography of polycrystalline material" Analyst., 139(22): 5766-5772. (2014). ...
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
Publié le 10/11/2016
... Pallecchi, E., Lafont, F., Cavaliere, V., Schopfer, F., Mailly, D., Poirier, W., Ouerghi, A. "High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen" Scientific Reports., 4: art.n° 4558. (2014). ...
Comparison between a near-field and a far-field indexing approach for characterization of a polycrystalline sample volume containing more than 1500 grains
Publié le 10/11/2016
... Nervo, L., King, A., Wright, J.P., Ludwig, W., Reischig, P., Quinta da Fonseca, J., Preuss, M. "Comparison between a near-field and a far-field indexing approach for characterization of a polycrystalline sample volume containing more than 1500 grains" ...
Density measurements and structural properties of liquid and amorphous metals under high pressure
Publié le 10/11/2016
... Morard , G., Gabarino, G., Antonangeli, D., Andrault, D., Guignot, N., Siebert, J., Roberge, M., Boulard, E., Lincot, A., Denoeud, A., Petitgirard, S. "Density measurements and structural properties of liquid and amorphous metals under high pressure" High ...