RECHERCHER
Résultats de la recherche ""
Auger resonant-Raman decay after Xe L-edge photoexcitation
Publié le 10/11/2016
... Kushawaha, R.K., Jänkälä, K., Marchenko, T., Goldsztejn, G., Guillemin, R., Journel, L., Céolin, D., Rueff, J.P., Lago, A.F., Püttner, R., Piancastelli, M.N., Simon, M. "Auger resonant-Raman decay after Xe L-edge photoexcitation" Physical Review A., 92(1) ...
On sulfur core level binding energies in thiol self-assembly and alternative adsorption sites: An experimental and theoretical study
Publié le 10/11/2016
... Jia, J., Kara, A., Pasquali, L., Bendounan, A., Sirotti, F., Esaulov, V.A. "On sulfur core level binding energies in thiol self-assembly and alternative adsorption sites: An experimental and theoretical study" Journal of Chemical Physics., 143(10): art.n ...
Postcollision interaction effects in KLL Auger spectra following argon 1s photoionization
Publié le 10/11/2016
... Guillemin, R., Sheinerman, S., Püttner, R., Marchenko, T., Goldsztejn, G., Journel, L., Kushawaha, R.K., Céolin, D., Piancastelli, M.N., Simon, M. "Postcollision interaction effects in KLL Auger spectra following argon 1s photoionization" Physical Review ...
Possible evidence for high-pressure induced charge transfer in thallium rhenium oxide at room temperature
Publié le 10/11/2016
... Ablett, J.M., Rueff, J.P., Shieh, S.R., Kao, C.C., Wang, S. "Possible evidence for high-pressure induced charge transfer in thallium rhenium oxide at room temperature" Physical Review B., 92(1): art.n° 014113. (2015). ...
Instantaneous Band Gap Collapse in Photoexcited Monoclinic VO2 due to Photocarrier Doping
Publié le 10/11/2016
... Wegkamp, D., Herzog, M., Xian, L., Gatti, M., Cudazzo, P., McGahan, C.L., Marvel, R.E., Haglund Jr., R.F., Rubio, A., Wolf, M., Stähler, J. "Instantaneous Band Gap Collapse in Photoexcited Monoclinic VO2 due to Photocarrier Doping" Physical Review Letters ...
Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping
Publié le 10/11/2016
... Vobornik, I., Panaccione, G., Fujii, J., Zhu, Z.H., Offi, F., Salles, B.R., Borgatti, F., Torelli, P., Rueff, J.P., Céolin, D., Artioli, A., Levy, G., Marangolo, M., Eddrief, M., Krizmancic, D., Ji, H., Damascelli, A., van der Laan, G., Egdell, R.G., Cava ...
Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures
Publié le 10/11/2016
... Velez-Fort, E., Pallecchi, E., Silly, M.G., Bahri, M., Patriarche, G., Shukla, A., Sirotti, F., Ouerghi, A. "Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures" Nano Research., 7(6): 835-843. (2014). ...
Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)
Publié le 10/11/2016
... Velez-Fort, E., Ouerghi, A., Silly, M.G., Eddrief, M., Shukla, A., Sirotti, F., Marangolo, M. "Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)" Applied Physics Letters., 104(9): art.n° 093109. (2014). ...
Dissociation of Ethoxysilane and Methoxysilane on Si(001)-2×1 and Si(111)-7×7 at Room Temperature: a Comparative Study using Synchrotron Radiation Photoemission
Publié le 10/11/2016
... Tissot, H., Gallet, J.J., Bournel, F., Pierucci, D., Silly, M.G., Sirotti, F., Rochet, F. "Dissociation of Ethoxysilane and Methoxysilane on Si(001)-2×1 and Si(111)-7×7 at Room Temperature: a Comparative Study using Synchrotron Radiation Photoemission" ...
Silicon Monomer Formation and Surface Patterning of Si(001)-2×1 following Tetraethoxysilane Dissociative Adsorption at Room Temperature
Publié le 10/11/2016
... Tissot, H., Gallet, J.J., Bournel, F., Naitabdi, A., Pierucci, D., Bondino, F., Magnano, E., Rochet, F., Finocchi, F. "Silicon Monomer Formation and Surface Patterning of Si(001)-2×1 following Tetraethoxysilane Dissociative Adsorption at Room Temperature" ...