RECHERCHER
Résultats de la recherche ""
Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily be-doped ZnSe ternaries
Publié le 10/11/2016
... Khan, S., Singh, P., Mazher, J. "Extended X-ray absorption fine structure studies of impulsive-type hardening in the heavily be-doped ZnSe ternaries" Journal of the Korean Physical Society., 64(4): 584-590. (2014). ...
Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing
Publié le 10/11/2016
... Jabakhanji, B., Michon, A., Consejo, C., Desrat, W., Portail, M., Tiberj, A., Paillet, M., Zahab, A., Cheynis, F., Lafont, F., Schopfer, F., Poirier, W., Bertran, F., Le Fèvre, P., Taleb-Ibrahimi, A., D. Kazazis, D., Escoffier, W., Camargo, B.C., ...
Walking peptide on Au(110) surface: Origin and nature of interfacial process
Publié le 10/11/2016
... Humblot, V., Tejeda, A., Landoulsi, J., Vallée, A., Naitabdi, A., Taleb-Ibrahimi, A., Pradier, C.M. "Walking peptide on Au(110) surface: Origin and nature of interfacial process" Surface Science., 628: 21-29. (2014). ...
Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry
Publié le 10/11/2016
... Hajlaoui, M., Papalarazou, E., Mauchain, J., Perfetti, L., Taleb-Ibrahimi, A., Navarin, F., Monteverde, M., Auban-Senzier, P., Pasquier, C.R., Moisan, N., Boschetto, D., Neupane, M., Hasan, M.Z., Durakiewicz, T., Jiang, Z., Xu, Y., Miotkowski, I., Chen, Y ...
Ultrafast filling of an electronic pseudogap in an incommensurate crystal
Publié le 10/11/2016
... Brouet, V., Mauchain, J., Papalarazou, E., Faure, J., Marsi, M., Lin, P.H., Taleb-Ibrahimi, A., Le Fevre, P., Bertran, F., Cario, L., Janod, E., Corraze, B., Ta Phuoc, V., Perfetti, L. "Ultrafast filling of an electronic pseudogap in an incommensurate ...
Large Temperature Dependence of the Number of Carriers in Co-Doped BaFe2As2
Publié le 10/11/2016
... Brouet, V., Lin, P.H., Texier, Y., Bobroff, J., Taleb-Ibrahimi, A., Le Fevre, P., Bertran, F., Casula, M. F., Werner, P., Biermann, S., Rullier-Albenque, F., Forget, A., Colson, D. "Large Temperature Dependence of the Number of Carriers in Co-Doped ...
Polyamorphism in cerium based bulk metallic glasses: Electronic and structural properties under pressure and temperature by x-ray absorption techniques
Publié le 10/11/2016
... Belhadi, L., Decremps, F., Pascarelli, S., Cormier, L., Le Godec, Y., Gorsse, S., Baudelet, F., Garbarino, G. "Polyamorphism in cerium based bulk metallic glasses: Electronic and structural properties under pressure and temperature by x-ray absorption ...
Pressure-induced phase-transition sequence in CoF 2 : An experimental and first-principles study on the crystal, vibrational, and electronic properties
Publié le 10/11/2016
... Barreda-Argüeso, J.A., López-Moreno, S., Sanz-Ortiz, M.N., Aguado, F., Valiente, R., González, J., Rodríguez, F., Romero, A.H., Muñoz, A., Nataf, L., Baudelet, F. "Pressure-induced phase-transition sequence in CoF 2 : An experimental and first-principles ...
Silicon intercalation into the graphene-SiC interface
Publié le 10/11/2016
... Wang, F., Shepperd, K., Hicks, J., Nevius, M.S., Tinkey, H., Tejeda, A., Taleb-Ibrahimi, A., Bertran, F., Le Fevre, P., Torrance, D.B., First, P.N., de Heer, W.A., Zakharov, A.A., Conrad, E.H. "Silicon intercalation into the graphene-SiC interface" ...
Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure
Publié le 10/11/2016
... Tejeda, A., Taleb-Ibrahimi, A., de Heer, W.A., Berger, A., Conrad, E.H. "Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure" New Journal of Physics., 14(12): art.n° 125007. (2012). ...