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Résultats de la recherche ""
Defect States at the TiO2(110) Surface Probed by Resonant Photoelectron Diffraction
Publié le 10/11/2016
... Krüger, P., Bourgeois, S., Domenichini, B., Magnan, H, Chandesris, D., Le Fevre, P., Flank, A.M., Jupille, J., Floreano, L., Cossaro, A., Verdini, A., Morgante, A. "Defect States at the TiO2(110) Surface Probed by Resonant Photoelectron Diffraction" ...
Pressure-Induced Valence Anomaly in TmTe Probed by Resonant Inelastic X-Ray Scattering
Publié le 10/11/2016
... Jarrige, I, Rueff, J.P., Shieh, S. R., Taguchi, M., Ohishi, Y., Matsumura, T., Wang, C.P., Ishii, H., Hiraoka, N., Cai, Y.Q. "Pressure-Induced Valence Anomaly in TmTe Probed by Resonant Inelastic X-Ray Scattering" Physical Review Letters., 101(12): art.n ...
Charge transfer at the metal-insulator transition in V2O3 thin films by resonant inelastic x-ray scattering
Publié le 10/11/2016
... Hague, C.F., Mariot, J.-M., Ilakovac, V., Delaunay, R., Marsi, M., Sacchi, M., Rueff, J.P., Felsch, W. "Charge transfer at the metal-insulator transition in V2O3 thin films by resonant inelastic x-ray scattering" Physical Review B., 77(4): art.n° 045132. ...
Thermal behavior of the Au/c-Si3N4/Si(111) interface
Publié le 10/11/2016
... Flammini, R., Wiame, F., Belkhou, R., Taleb-Ibrahimi, A., Spezzani, C., Moras, P., Crotti, C. "Thermal behavior of the Au/c-Si3N4/Si(111) interface" Journal of Applied Physics., 103(8): art.n° 083528. (2008). ...
Resonant magnetic scattering of polarized x-rays at the Mn 2p edge from Mn0.06Ge0.94 diluted magnetic semiconductor
Publié le 10/11/2016
... De Padova, P., Perfetti, P., Quaresima, C., Zema, N., Grazioli, C., Spezzani, C., Testa, A.M., Fiorani, D., Olivieri, B., Mariot, J.M., Taleb-Ibrahimi, A., Richter, M.C., Heckmann, O., Hricovini, K. "Resonant magnetic scattering of polarized x-rays at the ...
Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on Ge(001): Influence of Mn5Ge3 nanoscopic clusters on the electronic and magnetic properties
Publié le 10/11/2016
... De Padova, P., Ayoub, J.P., Berbezier, I., Perfetti, P., Quaresima, C., Testa, A.M., Fiorani, D., Olivieri, B., Mariot, J.-M., Taleb-Ibrahimi, A., Richter, M.C., Heckmann, O., Hricovini, K. "Mn0.06Ge0.94 diluted magnetic semiconductor epitaxially grown on ...
An infiltration manufacturing process for nuclear fuels
Publié le 10/11/2016
... Bowerman, B., Ablett, J.M., Milian, L., Adams, J., Ludwig, H., Todosow, M. "An infiltration manufacturing process for nuclear fuels". Paper presented at the 4th International Topical Meeting on High Temperature Reactor Technology, HTR 2008 -28/09-01/10 ...
Dynamical reconstruction of the exciton in LiF with inelastic x-ray scattering
Publié le 10/11/2016
... Abbamonte, P., Graber, T., Reed, J.P., Smadici, S., Yeh, C.L., Shukla, A., Rueff, J.P., Ku, W. "Dynamical reconstruction of the exciton in LiF with inelastic x-ray scattering" PNAS., 105(34): 12159-12163. (2008). ...
Pressure-induced f-electron delocalization in the U-based strongly correlated compounds UPd3 and UPd2Al3: Resonant inelastic x-ray scattering and first-principles calculations
Publié le 10/11/2016
... Rueff, J.P., Raymond, S., Yaresko, A., Braithwaite, D., Leininger, P., Vankó, G., Huxley, A., Rebizant, J., Sato, N. "Pressure-induced f-electron delocalization in the U-based strongly correlated compounds UPd3 and UPd2Al3: Resonant inelastic x-ray ...
Localization-delocalization of f-electron: A novel view by resonant inelastic X-ray scattering under high pressure
Publié le 10/11/2016
... Rueff, J.P., Hague, C.F., Itié, J.P., Mariot, J.M., Raymond, S., Taguchi, M., Yaresko, A. "Localization-delocalization of f-electron: A novel view by resonant inelastic X-ray scattering under high pressure". Paper presented at the . JOURNAL OF ELECTRON ...