RECHERCHER
Résultats de la recherche ""
Probing and Controlling Surface Passivation of PbS Quantum Dot Solid for Improved Performance of Infrared Absorbing Solar Cells
Publié le 16/05/2019
... Zhang, X., Cappel, U.B., Jia, D., Zhou, Q., Du, J., Sloboda, T., Svanström, S., Johansson, F.O.L., Lindblad, A., Giangrisostomi, E., Ovsyannikov, R., Liu, J., Rensmo, H., Gardner, J.M., Johansson, E.M.J. "Probing and Controlling Surface Passivation of PbS ...
Effective determination of surface potential landscapes from metal-organic nanoporous network overlayers
Publié le 14/05/2019
... Piquero-Zulaica, I., Abd El-Fattah, ZM., Popova, O., Kawai, S., Nowakowska, S., Matena, M., Enache, M., Stöhr, M., Tejeda, A., Taleb-Ibrahimi, A., Meyer, E., Ortega, J. E., Gade, L.H., Jung, T. A., Lobo-Checa, J. "Effective determination of surface ...
Temperature-driven modification of surface electronic structure on bismuth, a topological border material
Publié le 17/04/2019
... Ohtsubo, Y., Yamashita, Y., Kishi, J., Ideta, S., Tanaka, K., Yamane, H., Rault, J.E., Le Fèvre, P., Bertran, F., Kimura, S. "Temperature-driven modification of surface electronic structure on bismuth, a topological border material" Journal of Physics D : ...
Si 1s−1, 2s−1 and 2p−1 lifetime broadening of SiX4 (X = F, Cl, Br, CH3) molecules: SiF4 anomalous behaviour reassessed
Publié le 13/04/2019
... Püttner, R., Marchenko, T., Guillemin, R., Journel, L., Goldsztejn, G., Céolin, D., Takahashi, O., Ueda, K., Lago, A.F., Piancastelli, M.N., Simon, M. "Si 1s−1, 2s−1 and 2p−1 lifetime broadening of SiX4 (X = F, Cl, Br, CH3) molecules: SiF4 anomalous ...
Electronic structure of the α-(BEDT-TTF)2I3 surface by photoelectron spectroscopy
Publié le 05/04/2019
... Tisserond, E., Nilforoushan, N., Caputo, M., Alemany, P., Canadell, E., Khalil, L., Vobornik, I., Fujii, J., Das, P.K., Mézière, C., Batail, P., Pouget, J.P., Pasquier, C., Marsi, M., Monteverde, M. "Electronic structure of the α-(BEDT-TTF)2I3 surface by ...
CALIPSO plus : SOLEIL et Synchrotronix travaillent ensemble pour améliorer les techniques d'analyse de surface pour l'Industrie
Publié le 04/04/2019
... De nombreux acteurs privés sont aujourd'hui confrontés à des difficultés lorsqu’ils doivent caractériser finement la surface des matériaux. Le développement de techniques pratiques et fiables devrait cependant changer ...
Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001)
Publié le 29/03/2019
... Kremer, G., Alvarez Quiceno, J.C., Lisi, S., Pierron, T., Gonzalez, C., Sicot, M., Kierren, B., Malterre, D., Rault, J., Le Fevre, P., Bertran, F., Dappe, Y.J., Coraux, J., Pochet, P., Fagot-Revurat, Y. "Electronic Band Structure of Ultimately Thin ...
Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals
Publié le 27/03/2019
... Henck, H., Pierucci, D., Zribi, J., Bisti, F., Papalazarou, E., Girard, J.C., Chaste, J., Bertran, F., Le Fèvre, P., Sirotti, F., Perfetti, L., Giorgetti, C., Shukla, A., Rault, J.E., Ouerghi, A. "Evidence of direct electronic band gap in two-dimensional ...
Recoil-induced ultrafast molecular rotation probed by dynamical rotational Doppler effect
Publié le 20/02/2019
... Céolin, D., Liu, J.C., Vaz da Cruz, V., Ågren, H., Journel, L., Guillemin, R., Marchenko, T., Kushawaha, R.K., Piancastelli, M.N., Püttner, R., Simon, M., Gel’mukhanov, F. "Recoil-induced ultrafast molecular rotation probed by dynamical rotational Doppler ...
Oxygen states in La- and Rh-doped Sr2IrO4 probed by angle-resolved photoemission and O K-edge resonant inelastic x-ray scattering
Publié le 20/02/2019
... Ilakovac, V., Louat, A., Nicolaou, A., Rueff, J.P., Joly, Y., Brouet, V. "Oxygen states in La- and Rh-doped Sr2IrO4 probed by angle-resolved photoemission and O K-edge resonant inelastic x-ray scattering" Physical Review B., 99(3): art.n° 035149. (2019). ...