PUBLICATIONS
- Jones, R., D’Acunto, G., Shayesteh, P., Pinsard, I., Rochet, F., Bournel, F., Gallet, J.J., Head, A., Schnadt, J. "Operando study of HfO2 atomic layer deposition on partially hydroxylated Si(111)" Journal of Vacuum Science & Technology A., 42(2): art.n° 42, 022404. (2024).