Dernière mise à jour : 01/07/2025
Senkovskiy, B.V., Usachov, D.Y., Fedorov, A.V., Marangoni, T., Haberer, D., Tresca, C., Profeta, G., Caciuc, V., Tsukamoto, S., Atodiresei, N., Ehlen, N., Chen, C., Avila, J., Asensio, M.C., Varykhalov, A.Y., Nefedov, A., Wöll, C., Kim, T.K., Hoesch, M., Fischer, F.R., Grüneis, A. "Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint" ACS Nano., 12(8): 7571–7582. (2018).
Zhang, H., Bao, C., Jiang, Z., Zhang, K., Li, H., Chen, C., Avila, J., Wu, Y., Duan, A., Asensio, M.C., Zhou, S. "Resolving deep quantum well states in atomically thin 2H-MoTe2 flakes by Nanospot Angle-Resolved Photoemission Spectroscopy" Nano Letters., 18(8): 4664–4668. (2018).
Chen, Y., Chen, C., Kealhofer, R., Liu, H., Yuan, Z., Jiang, L., Suh, J., Park, J., Ko, C., Choe, H.S., Avila, J., Zhong, M., Wei, Z., Li, J., Li, S., Gao, H., Liu, Y., Analytis, J., Xia, Q., Asensio, M.C., Wu, J. "Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy" Advanced Materials., 30(30): art.n° 1800754. (2018).
Razado-Colambo, I., Avila, J., Vignaud, D., Godet, S., Wallart, X., Woodruff, D.P., Asensio, M.C. "Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction" Scientific Reports., 8: art.n° 10190. (2018).
Yao, W., Wang, E., Bao, C., Zhang, Y., Zhang, K., Bao, K., Chan, C.K., Chen, C., Avila, J., Asensio, M.C., Zhu, J., Zhou, S. "Quasicrystalline 30° twisted bilayer graphene as an incommensurate superlattice with strong interlayer coupling" PNAS., 115(27): 6928-6933. (2018).
Gunasekera, S.M., Wolverson, D., Hart, L.S., Mucha-Kruczynski, M. "Electronic Band Structure of Rhenium Dichalcogenides" Journal of Electronic Materials., 47(8): 4314–4320. (2018).
Henck, H., Avila, J., Ben Aziza, Z., Pierucci, D., Baima, J., Pamuk, B., Chaste, J., Utt, D., Bartos, M., Nogajewski, K., Piot, B.A., Orlita, M., Potemski, M., Calandra, M., Asensio, M.C., Mauri, F., Faugeras, C., Ouerghi, A. "Flat electronic bands in long sequences of rhombohedral-stacked graphene" Physical Review B., 97(24): art.n° 245421. (2018).
Mozetič,M., Vesel,A., Primc,G., Eisenmenger-Sittner,C., Bauer,J., Eder,A., Schmid,G.H.S., Ruzic,D.N., Ahmed,Z., Barker,D., Douglass,K.O., Eckel,S., Fedchak, J.A., Hendricks,J., Klimov,N., Ricker, J., Scherschligt, J., Stone,J, Strouse,G., Capan,L., Buljan,M., Milošević,S., Teichert,C., Cohen,S.R., Silva,A.G., Lehocky,M., Humpoliček,P., Rodriguez,C., Hernandez-Montelongo,J., Mercier,D., Manso-Silván,M., Ceccone,G., Galtayries,A., StanaKleinschek,K., Petrov,I., Greene, J.E., Avila,J., Chen,C.Y., Caja-Munoz,B., Yi,H., Boury,A., Lorcy,S., Asensio,M.C., Bredin,J., Gans,T., O'Connell,D., Brendin,J., Reniers,F., Vincze,A., Anderle,M., Montelius, L. "Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology" Thin Solid Films., 660: 120-160. (2018).
Kim, Y., Moyen, E., Yi, H., Avila, J., Chen, C., Asensio, M.C., Lee, Y.H., Pribat, D. "Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates" 2D Materials., 5(3): art.n° 035008. (2018).
Louat, A., Bert, F., Serrier-Garcia, L., Bertran, F., Le Fèvre, P., Rault, J., Brouet, V. "Formation of an incoherent metallic state in Rh-doped Sr2IrO4" Physical Review B., 97(16): art.n° 161109. (2018).