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Last update : 02.03.2023
E.g., 02/06/2023
E.g., 02/06/2023
Nafday, D., Richter, C., Heckmann, O., Wang, W., Mariot, J.M., Djukic, U., Vobornik, I., Lefevre, P., Taleb-Ibrahimi, A., Bertran, F., Rault, J., Nicolaï, L., Ong, C.S., Thunström, P., Hricovini, K., Minár, J., Di Marco, I. "Electronic structure of Bi nanolines on InAs(100)" Applied Surface Science., 611(Part A): art.n° 155436. (2023).
Palacio, I., Obando-Guevara, J., Chen, L., Nair, M.N., Gonzalez Barrio, M.A., Papalazarou, E., Le Fèvre, P., Taleb-Ibrahimi, A., Michel, E.G., Mascaraque, A., Tejeda, A. "Fermi surface of LaSb2 and direct observation of a CDW transition" Applied Surface Science., 610: art.n° 155477. (2023).
Croes, B., Cheynis, F., Fagot-Revurat, Y., Müller, P., Curiotto, S., Leroy, F. "Early-stage growth of GeTe on Si(111)-Sb" Physical Review Materials., 7(1): art.n° 014409. (2023).
Nair, M.N., Palacio, I., Mascaraque, A., Michel, E.G., Taleb-Ibrahimi, A., Tejeda, A., González, C., Martín-Rodero, A., Ortega, J., Flores, F. "Giant electron-phonon interaction for a prototypical semiconductor interface: Sn/Ge(111)-(3 × 3)" Physical Review B., 107(4): art.n° 045303. (2023).
Prudkovskiy, V.S., Hu, Y., Zhang, K., Hu, Y., Ji, P., Nunn, G., Zhao, J., Shi, C., Tejeda, A., Wander, D., De Cecco, A., Winkelmann, C.B., Jiang, Y., Zhao, T., Wakabayashi, K., Jiang, Z., Ma, L., Berger, C., de Heer, W.A. "An epitaxial graphene platform for zero-energy edge state nanoelectronics" Nature Communications., 13: art.n° 7814. (2022).
Salazar; R., Varotto, S., Vergnaud, C., Garcia, V., Fusil, S., Chaste,  J., Maroutian, T., Marty, A., Bonell, F., Pierucci, D., Ouerghi, A., Bertran, F., Le Fèvre, P., Jamet, M., Bibes, M., Rault, J. "Visualizing Giant Ferroelectric Gating Effects in Large-Scale WSe2/BiFeO3 Heterostructures" Nano Letters., 22(23): 9260–9267. (2022).
Varotto, S., Johansson, A., Göbel, B., Vicente-Arche, L.M., Mallik, S., Bréhin, J., Salazar, R., Bertran, F., Le Fèvre, P., Bergeal, N., Rault, J., Mertig, I., Bibes, M. "Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO3 interfaces" Nature Communications., 13: art. n° 6165. (2022).
Khalil, L., Forcella, P.M., Kremer, G., Bisti, F., Chaste, J., Girard, J.C., Oehler, F., Pala, M., Dayen, J.F., Logoteta, D., Goerbig, M., Bertran, F., Le Fèvre, P., Lhuillier, E., Rault, J., Pierucci, D., Profeta, G., Ouerghi, A. "α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene" Physical Review B., 106(12): art.n° 125152. (2022).
Antonelli, T., Rahim, W., Watson, M.D., Rajan, A., Clark, O.J., Danilenko, A., Underwood, K., Marković,I., Abarca-Morales,E., Kavanagh,S.R., Le Fèvre, P., Bertran, F., Rossnagel, K., Scanlon, D.O., King, P.D.C. "Orbital-selective band hybridisation at the charge density wave transition in monolayer TiTe2" npj Quantum Materials., 7: art.n° 98. (2022).
Ohtsubo, Y., Kimura, S.I., Iga, F. "Recent progress in clean-surface formation of topological Kondo insulators and topological surface states observed there" Electronic Structure., 4(3): art.n° 033003. (2022).