The GALAXIES beamline is dedicated to inelastic x-ray scattering (IXS) and hard x-ray photoemission (HAXPES). These spectroscopic techniques are powerful probes to characterize the electronic properties of materials. The beamline is optimized to operate in the 2.3 - 12 keV energy range with high resolution and micro beam.
GALAXIES comprises of two endstations for RIXS and HAXPES
Scientific opportunities
Quantum materials |
Strongly correlated electrons Superconducting materials Mixed valent compounds; heavy fermions Oxide heterostructures ; interfaces |
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Energy materials, catalysis |
Metal complexes Chemical analysis in-situ Catalysis, electrochemistry |
Extreme Conditions |
Phase transition under high pressure K-edge of light elements |
Dilute Matter, Liquid phases |
Chemistry in solution Ultrafast molecular dynamics |
Cultural heritage materials |
Chemical speciation Imaging |
Team
Employment
access to the SOLEIL employment web page
Technical data
2.3 – 12 keV
ΔE from 100 meV to 1 eV at 8 keV
In-vacuum U20 undulator
linear (H)
linear (V), circular with a quarter wave plate
20 (V) x 80 (H) µm2 in standard mode, 5 (V) x 10 (H) µm2 in KB configuration
2-bounce fixed-exit monochromator Si111, DCM
4-bounce high-resolution monochromator (Si220 symetric and asymetric), HRM
Collimating and focusing mirrors; 2 mirrors in KB configuration
1.5x1012 ph/s (standard foc.), 5x1011 (micro-foc.) at 8 keV
Pixelated detectors
Si drift diodes
Avalanche diode
RIXS : 1-2m radius IXS spectrometer ; 0.5-1 m radius multi-analyzer setup (4x1 or 2x2)
HAXPES : high energy / high resolution electron analyzer (30 meV à 12 keV)
Layout
RIXS
IXS / RIXS / XES
Newport RIXS spectrometer in Rowland circle geometry
Energy range : ~4-12 keV
Spot size : 80 x 30 μm2 (H x V) [mode M2B] or 15 x 15 μm2 (H x V) [mode KB]
XES scanning / HERFD-XAS
4 crystals, R = 1m ou 0.5 m
Johann geometry
XRS
X-Ray Raman Scattering
Johann geometry
Si(110), 40 analyzers, R = 1m
XES dispersive
Von Hamos dispersive geometry
8 x Si(110), 8 x Si(111), R :=0.5 m
List of Available analyzers
Crystal | Rayon | Emin | Emax | Use | Type |
Si(111) | 1 m | 1977.35 (1) | 2103.93 (1) | Bent uniform | |
5932.05 (3) | 6311.79 (3) | Cr Kβ, Gd Lα1, Tb Lα1, Cr K | |||
7909.40 (4) | 8415.72 (4) | Cu Kα1, Ni Kβ | |||
9886.74 (5) | 10519.65 (5) | Tl La1 | |||
Si (220) | 1 m | 3229.00 (1) | 3435.70 (1) | K Kα1, nIXS | Bent diced |
6457.99 (2) | 6871.41 (2) | Mn Kβ, Mn K | |||
9686.99 (3) | 10307.1 (3) | Ge Kα1 | |||
Ge (331) | 1 m | 4777.59 | 5083.43 | Ce Lα1, V Kα1, Pr Lα1 | Bent uniform |
Si (531) | 1 m | 6753.93 | 7186.29 | Co Kα1,Fe Kβ, Fe K | Bent uniform |
Si (620) | 1 m | 7220.26 | 7682.47 | Yb Lα1, Ni Kα1, Co Kβ | Bent uniform |
Si (533) | 2 m | 7486.12 | 7786.62 | Co Kβ, Co K | Bent uniform |
Si (551) | 2 m | 8152.82 | 8480.08 | Ni Kβ, Ni K | Bent uniform |
Si (553) | 2 m | 8768.97 | 9120.97 | Cu Kβ, Cu K | Bent uniform |
Ge(111) | 1 m | 1898.42 (1) | 2019.95 (1) | P Kα1 | Bent uniform |
5695.26 (3) | 6059.85 (3) | Mn Kα1, Eu Lα1 | |||
7593.68 (4) | 8079.79 (4) | Co K, Co Kβ | |||
9492.10 (5) | 10099.74 (5) | Zn K, Zn Kβ, Ge Kα1 | |||
Ge(220) | 1m | 3100.00 (1) | 3298.45 (1) | K Kα1 | Bent uniform |
6199.99 (2) | 6596.89 (2) | Fe Kα1, Mn Kβ | |||
9299.99 (3) | 9895.34 (3) | Zn Kβ | |||
Si(311) | 1m | 3786.34 (1) | 4028.72 (1) | I Lα1, Ca Kβ, Ca K | Bent uniform |
11359.01 (3) | 12086.16 (3) | As K, Br Kα1 |
Sample Environments
- High pressure cells
- Low temperature cryostats : He flow / He closed loop / He Fast loading / He cryostat for high pressure
- High temperature
- Liquid microjet
- Liquide cell
HAXPES
Instrument
Hemispherical Analyzer SCIENTA EW4000
Ec < 12 keV, resolution = 150 meV
wide acceptance angle +/- 25°
Spot size : 80 x 30 μm2 (H x V)
Sample preparation
- UHV cleaving
- High temperature (900 °C)
- LEED
Sample environnements UHV
- 4 axes manipulator
- Low temperature (15 K)
- High temperature (900 °C)
- In-situ bias
- Liquid microjet
- Liquid cell
- Gas cell
References
Please use the following references when using the beamline equipments
Beamline
J.-P. Rueff, J. M. Ablett, D. Céolin, D. Prieur, Th. Moreno, V. Balédent, B. Lassalle, J. E. Rault, M. Simon, and A. Shukla, The galaxies beamline at soleil synchrotron: Inelastic x-ray scattering and photoelectron spectroscopy in the hard x-ray range, J. Synchrotron Rad. 22, 175 (2015).
HAXPES
D. Céolin, J.M. Ablett, D. Prieur, T. Moreno, J.-P. Rueff, B. Pilette, T. Marchenko, L. Journel, T. Marin, R. Guillemin, and M. Simon, Hard X-ray Photoelectron Spectroscopy on the GALAXIES beamline at the SOLEIL synchrotron, J. Elec. Spect. Relat. Phenom. 190, 188 (2013)
RIXS
J. M. Ablett,D. Prieur, D. Céolin, B. Lassalle-Kaiser, B. Lebert, M. Sauvage, Th. Moreno, S. Bac, V. Balédent, A. Ovono, M. Morand, F. Gélebart, A. Shukla and J.-P. Rueff, 'The GALAXIES inelastic hard X-ray scattering end-station at Synchrotron SOLEIL,' J. Synchrotron Rad. 26, 2019.
RIXS Multianalyseurs
F. Gélebart, M. Morand, Q. Dermigny, P. Giura, J.-P. Rueff, and A. Shukla, Large Solid Angle Spectrometer for Inelastic X-ray Scattering, AIP Conference Proceedings 879 (2007), no. 1, 1837.
HRM
J.M. Ablett, J.-M. Dubuisson, T. Moreno, D. Céolin, E. Raimon, D. Prieur, D. Corruble, J. Coquet, A. Lestrade, C. Bourgoin, and J.-P. Rueff, New Design Concept for a High-Resolution In-Vacuum 4-Bounce Hard X-Ray Monochromator at the GALAXIES Beamline at the SOLEIL Synchrotron, Journal of Physics Conferences Series, 425: art.n° 052007 (2013)