P. Soukiassian, H.B. Enriquez,
CEA Saclay- France
 
M.Silly, C.Chauvet, F.Sirotti 
Tempo beamline - Synchrotron SOLEIL

Using valence band photoemission spectroscopy, we performed first band structure measurements of the 3C-SiC(100) 3x2 surface metallised by atomic hydrogen exposure.
A dedicated experimental set-up in the analysis chamber made it possible to expose the surface to atomic hydrogen during photoemission measurements. To identify the first stage of surface metallization we measured during H deposition both the density of states at the Fermi level and the evolution of the band bending at the C1s core-level.
In this way we finalised a time-saving procedure to control the hydrogen coverage leading to a metallic H/3x2 SiC(100) surface.
Figure 1 shows the emergence of a clear state at the Fermi level in angle-integrated valence band measurements after a certain time of atomic H exposure. We notice that this surface metallic state is more intense than the surface state characteristic from the 3x2 reconstruction at 1,2 eV binding energy.
It is also much more intense than the Fermi level built-up we have previously measured on H/3x2SiC(100) surfaces [1]

[1] Nature Mat. 2, 253 (2003)