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Graphitization of 3C-SiC/Silicon: A step toward Graphene-Silicon technology

The graphene is nowadays one of the most promising materials for next generation electronic devices. The graphene is a carbon bidimensional single crystal (single layer). The stacking of single graphene layers forms the graphite. The graphene was discovered for the first time by Andre GEIM, from Department of Physics of Manchester University, jointly with Konstantin NOVOSELOV. They both were awarded the Nobel Prize in 2010. The graphene has attracted a much attention these last years from academic researchers as well as industrials.


 
X-PEEM: A microscope between ELETTRA and SOLEIL

In 2003, a collaboration and research agreement between the CNRS and the SOLEIL national synchrotron was drawn up. This also included ELETTRA, the Italian synchrotron based in Trieste. The purpose of this agreement is to establish a formal collaboration between French and Italian research groups in the field of x-ray microscopy, and X-PEEM microscopy in particular (X-ray Photo-Emitted Electron Microscopy). SOLEIL’s X-PEEM microscope was therefore able to be installed on the French branch of the Nanospectroscopy beamline at ELETTRA whilst waiting for the soft x-ray microscopy beamline to be built at SOLEIL, where it is due to be installed in late 2010.


 
XMCD-PEEM evidence of the manipulation of multibit-states in single magnetic dots

Nanomagnetism and spintronics have been receiving an ever increasing attention over the past two decades.


Generation of 360° domain walls in magnetic tunnel junctions
Magnetic tunnel junctions (MTJ) are probably one of the most studied devices in the so called spintronics research field. Their active part is composed of two ferromagnetic electrodes separated by an insulating layer thinner than 3 nm that a tunnel current exists between the two electrodes.

 


 

 

 
Graphitisation de substrats 3C-SiC/Si(111) : vers la maitrise de la technologie graphène- silicium

Une étude multi-techniques (LEEM*, LEED**, STM***) réalisée par une collaboration entre les équipes du LPN-Marcoussis, du synchrotron SOLEIL et du SPCSI, a permis de caractériser une nouvelle méthode d'élaboration de couches de graphène. Les couches sont obtenues sur des films minces de SiC déposés sur des substrats de silicium standards pour la microélectronique. Cette convergence entre une nouvelle technologie graphène et la technologie silicium est un pas vers la réalisation de composants électroniques de haute performance.


 
Magnetostructure of MnAs on GaAs revisited

The ferromagnetic hexagonal α-phase of MnAs has a phase transition to the non-ferromagnetic orthorhombic β-phase at 318 K. The nature of magnetism in this phase has been the subject of many experimental and theoretical studies. The most recent theoretical work predicts either an antiferromagnetic or paramagnetic state. We have addressed this problem also from the experimental side, using epitaxial MnAs layers on GaAs. MnAs layers on GaAs are highly strained, which broadens the phase transition over a range of about 30 K. In this range α- and β-phase coexist. This allows studying both phases by combining XMLD- and XMCD-PEEM to determine the magnetic state of the β-phase and its interrelation with the ferromagnetic α-phase.


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