We can now “image” the beam coming from our Apple-II HU52 undulator using the DiagOn located in the first optic chamber.
The DiagOn (Diagnostique Onduleur) is a device developed at SOLEIL to visualize the photon beam at a particular energy (2 in our set-up*) coming from the undulator before it reaches any optic.
*In the case of our multilayer the energies selected are 390 eV and 2797 eV for the Si(111) at 45°.
The DiagOn allows not only to examine the beam position, shape and propagation direction while tuning the source, but also to characterize the behavior of the undulator itself. This is a very useful tool for us today as we have started the commissioning of our HU52 undulator.
The images bellow show the beam profile captured on the fluorescence screen (YAG) of the DiagOn as the gap of the undulator opens-up (from 15.5mm to 40.5mm).